3D TCAD Simulation for CMOS Nanoeletronic Devices

Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools.- Simulation analysis of 2D MOSFET.- Simulation analysis of 3D FinFET with LG = 15 nm.- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm.- Simulation analysis of GAA NWFET.- Simulation analysis of Junctionless FET with LG = 10 nm.- Simulation analysis of Tunnel FET.- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.

Dr. Yung-Chun Wu received his B.S. degree in Physics from National Central University in 1996, his M.S. degree in Physics from National Taiwan University in 1998, and his Ph.D. from National Chiao Tung University, Taiwan, in 2005. From 1998 to 2002, he was an assistant researcher at National Nano Device Laboratories, Hsinchu, Taiwan, where he was primarily engaged in research on single electron transistor and electron beam lithography technology. In 2006, he joined the Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan, where he is currently working as an associate professor. He teaches 3D CMOS semiconductor nanoelectronic devices by TCAD simulation course for seven years. His research interests include nanoelectronic devices and 3D TCAD simulation, flash memory devices, and solar cells. He has published 56 international SCI papers on nanoelectronic devices.Yi-Ruei Jhan received the B.S. degree in Physics from National Dong Hwa University in 2010, M. S. degree in Engineering and System Science from National Tsing Hua University in 2012, and Ph.D. degree in Engineering and System Science from National Tsing Hua University in 2015. In 2016, he joined the Research and Development department of Taiwan Semiconductor Manufacturing Company (TSMC) after his graduation. His research interests include Nanoelectronic MOSFET devices, TCAD simulation and Nonvolatile memory devices. He is author of book: 3D TCAD Simulation for CMOS Nanoeletronic Devices.