Analog IC Reliability in Nanometer CMOS
(Sprache: Englisch)
This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.
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Produktinformationen zu „Analog IC Reliability in Nanometer CMOS “
This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.
Klappentext zu „Analog IC Reliability in Nanometer CMOS “
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.
Inhaltsverzeichnis zu „Analog IC Reliability in Nanometer CMOS “
Introduction.- CMOS Reliability Overview.- Transistor Aging Compact Modeling.- Background on IC Reliability Simulation.- Analog IC Reliability Simulation.- Integrated Circuit Reliability.- Conclusions.
Bibliographische Angaben
- Autoren: Elie Maricau , Georges Gielen
- 2015, 2013, XVI, 198 Seiten, Maße: 17 x 24,1 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 1489986308
- ISBN-13: 9781489986306
Sprache:
Englisch
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