Field-effect Self-mixing Terahertz Detectors
(Sprache: Englisch)
A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field...
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A comprehensive device model considering both spatialdistributions of the terahertz field and the field-effect self-mixing factorhas been constructed for the first time in the thesis. The author has foundthat it is the strongly localized terahertz field induced in a small fractionof the gated electron channel that plays an important role in the highresponsivity. An AlGaN/GaN-based high-electron-mobility transistor with a2-micron-sized gate and integrated dipole antennas has been developed and canoffer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By furtherreducing the gate length down to 0.2 micron, a noise-equivalent power of 6pW/Hz1/2 has been achieved. This thesis provides detailed experimentaltechniques anddevice simulation for revealing the self-mixing mechanismincluding a scanning probe technique for evaluating the effectiveness ofterahertz antennas. As such, the thesis could be served as a valuableintroduction towards further development of high-sensitivity field-effect terahertzdetectors for practical applications.
Inhaltsverzeichnis zu „Field-effect Self-mixing Terahertz Detectors “
Introduction.- Field-Effect Self-Mixing Mechanism and Detector Model.- Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT.- Realization of Resonant Plasmon Excitation and Detection.- Scanning Near-Field Probe for Antenna Characterization.- Applications.- Conclusions and Outlook.Bibliographische Angaben
- Autor: Jiandong Sun
- 2018, Softcover reprint of the original 1st ed. 2016, XVIII, 126 Seiten, 4 farbige Abbildungen, Maße: 15,5 x 23,5 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 3662569485
- ISBN-13: 9783662569481
Sprache:
Englisch
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