FinFET/GAA Modeling for IC Simulation and Design
Using the BSIM-CMG Standard
(Sprache: Englisch)
FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology...
Erscheint am 31.05.2024
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Klappentext zu „FinFET/GAA Modeling for IC Simulation and Design “
FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.
Inhaltsverzeichnis zu „FinFET/GAA Modeling for IC Simulation and Design “
1. Gate-All-Around FET model2. Cryogenic Temperature Model
3. FinFET- from Device Concept to Standard Compact Model
4. Analog/RF behavior of FinFET
5. Core Model for FinFETs
6. Channel Current and Real Device Effects
7. Leakage Current Models
8. Charge, Capacitance and Nonquasi-Static Effect
9. Parasitic Resistances and Capacitances
10. Noise
11. Junction Diode Current and Capacitance
12. Benchmark tests for Compact Models
13. BSIM-CMG Model Parameter Extraction
14. Temperature Effects
Autoren-Porträt von Yogesh Singh Chauhan, Chenming Hu, Girish Pahwa, Avirup Dasgupta, Darsen Lu, Sriramkumar Vanugopalan, Sourabh Khandelwal, Juan Pablo Duarte, Navid Payvadosi, Ali Niknejad
Yogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design. He is the developer of several industry standard models, including the BSIM-BULK (BSIM6), BSIM-IMG, BSIM-CMG and ASM-HEMT models.
Bibliographische Angaben
- Autoren: Yogesh Singh Chauhan , Chenming Hu , Girish Pahwa , Avirup Dasgupta , Darsen Lu , Sriramkumar Vanugopalan , Sourabh Khandelwal , Juan Pablo Duarte , Navid Payvadosi , Ali Niknejad
- 2024, 2. Auflage, 352 Seiten, Maße: 19,1 x 23,5 cm, Kartoniert (TB), Englisch
- Verlag: ELSEVIER LTD
- ISBN-10: 0323957293
- ISBN-13: 9780323957298
- Erscheinungsdatum: 31.05.2024
Sprache:
Englisch
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