Fundamentals of Power Semiconductor Devices
(Sprache: Englisch)
This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
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This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Klappentext zu „Fundamentals of Power Semiconductor Devices “
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devices and includes the unique attributes and design requirements for emerging silicon carbide devices.
Inhaltsverzeichnis zu „Fundamentals of Power Semiconductor Devices “
Material Properties and Transport Physics.- Breakdown Voltage.- Schottky Rectifiers.- P-i-N Rectifiers.- Power MOSFETs.- Bipolar Junction Transistors.- Thyristors.- Thyristors.- Synopsis.
Bibliographische Angaben
- Autor: B. Jayant Baliga
- 2016, Softcover reprint of the original 1st ed. 2008, XXIII, 1069 Seiten, Maße: 15,7 x 23,5 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 1489977651
- ISBN-13: 9781489977656
Sprache:
Englisch
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