Growth of Crystals
Volume 18
(Sprache: Englisch)
This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the...
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Klappentext zu „Growth of Crystals “
This 18th volume of the series includes invited papers from the Seventh All-Union Conference on the Growth of Crystals and the Symposium on Molecular-Beam Epitaxy that were held in Moscow in November, 1988. In choosing papers, the Program Committee of the conference gave priority to studies in rapidly emerging areas of the growth and preparation of crystalS and crystalline films. The qualifications of the authors were also consid ered. This ensured that the material was of a high standard and that the problems discussed covered a wide range. These are the same criteria that, we hope, are typical of the volumes of this series. The articles of the present volume are divided into four sections: I. Processes on the growth surface. II. Molecular-beam epitaxy. III. Growth of crystals and films from solutions and fluxes. N. Growth of crystals from the melt. Following tradition, the series opens with three theoretical articles. These examine problems applicable to various crystallization media: instability of the crystallization front (for a more general case than before and for a comparatively complicated system, a solution), adsorption and migration of atoms and molecules (the analysis is made on a quantum-chemical level), and the kinetics of step and dislocation growth in the presence of surface anisotropy as well as impurity adsorption (several earlier known methods are summarized). The next two articles are experimental and methodical.
Inhaltsverzeichnis zu „Growth of Crystals “
I. Processes on Growth Surfaces.- Concentrational Instability of the Interface.- Quantum Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111) and Si(100) Surfaces.- Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impurities.- High-Resolution Transmission Electron Microscopic Study of Epitaxial Layers.- Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy.- II. Molecular-Beam Epitaxy.- Molecular-Beam Epitaxy of Silicon.- Molecular Epitaxy of A3B5 Compounds.- Epitaxy of Solid Solutions and Multilayered Structures in the System Cd-Hg-Te.- ?-Structures in Gallium Arsenide.- III. Growth of Crystals and Films from Solutions and Fluxes.- Influence of Impurities on Growth Kinetics and Morphology of Prismatic Faces of ADP and KDP Crystals.- Controlled Flux Growth of Complex Oxide Single Crystals.- Mechanism of Relaxation of the Nonequilibrium Liquid-Solid Interface before Liquid-Phase Heteroepitaxy of III-V Compounds.- Modelling and Control of Heat and Mass Transfer during Liquid Epitaxy.- IV. Growth of Crystals from the Melt.- Aggregation of Point Defects in Silicon Crystals Growing from the Melt.- Interaction of Crystals Growing in the Melt with Inclusions and Concentration Inhomogeneities.- Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals.- Multicomponent Fluoride Single Crystals (Current Status of Their Synthesis and Prospects).
Bibliographische Angaben
- 1992, VIII, 211 Seiten, Maße: 21 x 28 cm, Gebunden, Englisch
- Herausgegeben: E. I. Givargizov, S. A. Grinberg
- Übersetzer: Dennis W. Wester
- Verlag: Springer, Berlin
- ISBN-10: 0306181185
- ISBN-13: 9780306181184
Sprache:
Englisch
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