Microscopy of Semiconducting Materials
Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK
(Sprache: Englisch)
This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused...
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Klappentext zu „Microscopy of Semiconducting Materials “
This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.
Inhaltsverzeichnis zu „Microscopy of Semiconducting Materials “
Epitaxy: Wide Band-Gap Nitrides.- Epitaxy: Silicon-Germanium Alloys.- Epitaxy: Growth and Defect Phenomena.- High Resolution Microscopy and Nanoanalysis.- Self-Organised and Quantum Domain Structures.- Processed Silicon and Other Device Materials.- Device Studies.- Scanning Electron and Scanning Probe Advances.
Bibliographische Angaben
- 2010, XVI, 540 Seiten, Maße: 15,6 x 23,4 cm, Kartoniert (TB), Englisch
- Herausgegeben: A. G. Cullis, John L. Hutchison
- Verlag: Springer, Berlin
- ISBN-10: 3642068707
- ISBN-13: 9783642068706
Sprache:
Englisch
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