Resonant Tunneling in Semiconductors
Physics and Applications
(Sprache: Englisch)
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Inhaltsverzeichnis zu „Resonant Tunneling in Semiconductors “
A Perspective of Resonant Tunneling; L.L. Chang. Materials and Band-Structure Effects: Epitaxial Growth of Atomically Smooth GaAs/AlxGa1xAs Interfaces for Resonant Tunneling; K. Ploog. MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices; H. Riechert, et al. Tunneling in Polytype InAs-AlSb-GaSb Heterostructures; K.F. Longenbach, et al. Scattering and Dynamic Effects: Scattering processes, Coherent and Incoherent Transport in Resonant Tunneling Structures; B. Vinter, et al. Quantum Coherence and Phase Randomization in Series Resistors; M. Büttiker. Charge Buildup, Intrinsic Bistability and Energy Relaxation in Resoant Tunneling Structures: High Pressure and Magnetic Field Studies; L. Eaves, et al. Multiple-Barrier and Low-Dimensional Systems: Miniband Transport and Resonant Tunneling in Superlattices; J.F. Palmier. Transport in Superlattices: Observation of Negative Differential Conductance by Field Induced Localization and Its Equivalence with the Esaki-Tsu Mechanism: Scattering Controlled Resonances in Superlattices; F. Capasso, et al. Device Structures: High-Frequency Oscillators Based on Resonant Tunneling; T.C.L.G Sollner, et al. 39 additional articles. Index.
Bibliographische Angaben
- 1991, 537 Seiten, 33 Schwarz-Weiß-Abbildungen, Maße: 17,1 x 25,6 cm, Gebunden, Englisch
- Herausgegeben: L. L. Chang, E. E. Mendez, C. Tejedor
- Verlag: Springer, Berlin
- ISBN-10: 0306440482
- ISBN-13: 9780306440489
Sprache:
Englisch
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