Strain Effect in Semiconductors
Theory and Device Applications
(Sprache: Englisch)
This text presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers.
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This text presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers.
Klappentext zu „Strain Effect in Semiconductors “
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Inhaltsverzeichnis zu „Strain Effect in Semiconductors “
Overview: The Age of Strained Devices.- Band Structures of Strained Semiconductors.- Stress, Strain, Piezoresistivity, and Piezoelectricity.- Strain and Semiconductor Crystal Symmetry.- Band Structures of Strained Semiconductors.- Low-Dimensional Semiconductor Structures.- Transport Theory of Strained Semiconductors.- Semiconductor Transport.- Strain in Semiconductor Devices.- Strain in Electron Devices.- Piezoresistive Strain Sensors.- Strain Effects on Optoelectronic Devices.
Bibliographische Angaben
- Autoren: Yongke Sun , Scott E. Thompson , Toshikazu Nishida
- 2014, 2010, XII, 350 Seiten, Maße: 15,5 x 23,5 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 1489983155
- ISBN-13: 9781489983152
Sprache:
Englisch
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