The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits
The semi-empirical and compact model approaches
(Sprache: Englisch)
This book provides a comprehensive overview of design methodologies for Analog Circuits. It includes a MATLAB dedicated toolbox, and is the first book to present the gm/ID synthesis methodology. The book provides useful reference material.
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This book provides a comprehensive overview of design methodologies for Analog Circuits. It includes a MATLAB dedicated toolbox, and is the first book to present the gm/ID synthesis methodology. The book provides useful reference material.
Klappentext zu „The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits “
In "The gm/ID Methodology, a Sizing Tool for Low-Voltage Analog CMOS Circuits", we compare the semi-empirical to the compact model approach. Small numbers of parameters make the compact model attractive for the model paves the way towards analytic expressions unaffordable otherwise. The E.K.V model is a good candidate, but when it comes to short channel devices, compact models are either inaccurate or loose straightforwardness. Because sizing requires basically a reliable large signal representation of MOS transistors, we investigate the potential of the E.K.V model when its parameters are supposed to be bias dependent. The model-driven and semi-empirical methods are compared considering the Intrinsic Gain Stage and a few more complex circuits. A series of MATLAB files found on extras-springer.com allow redoing the tests.
Inhaltsverzeichnis zu „The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits “
Preface. Notations. Chapter 1. Sizing the Intrinsic Gain Stage. Chapter 2. The Charge Sheet Model revisited. Chapter 3. Graphical interpretation of the Charge Sheet Model. Chapter 4. Compact modeling. Chapter 5. The real transistor. Chapter 6. The real Intrinsic Gain Stage. Chapter 7. The common gate configuration. Chapter 8. Sizing the Miller Op. Amp. Annex 1. How to utilize the C.D. ROM data. Annex 2. The MATLAB toolbox. Annex 3. Temperature and Mismatch, from C.S.M. to E.K.V. Annex 4. E.K.V. intrinsic capacitance models. Bibliography. Index.
Bibliographische Angaben
- Autor: Paul Jespers
- 2014, XVI, 171 Seiten, Maße: 15,5 x 23,5 cm, Kartoniert (TB), Englisch
- Verlag: Springer, Berlin
- ISBN-10: 1461425050
- ISBN-13: 9781461425052
Sprache:
Englisch
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