Silicon Quantum Integrated Circuits / NanoScience and Technology (PDF)
Silicon-Germanium Heterostructure Devices: Basics and Realisations
(Sprache: Englisch)
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with...
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Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.
Inhaltsverzeichnis zu „Silicon Quantum Integrated Circuits / NanoScience and Technology (PDF)“
Introduction.- Materials Science.- Resume of Semiconductor Physics.- Realisation of Potential Barriers.- Electronic Device Principles.- Heterostructure Bipolar Transistor.- Hetero-Field-Effect Transistor.- Tunneling Phenomena.- Optoelectronics.- Integration.- Outlook.
Bibliographische Angaben
- Autoren: E. Kasper , D. J. Paul
- 2005, 2005, 364 Seiten, Englisch
- Verlag: Springer-Verlag GmbH
- ISBN-10: 3540263829
- ISBN-13: 9783540263821
- Erscheinungsdatum: 11.12.2005
Abhängig von Bildschirmgröße und eingestellter Schriftgröße kann die Seitenzahl auf Ihrem Lesegerät variieren.
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- Dateiformat: PDF
- Größe: 6.35 MB
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Sprache:
Englisch
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