Analysis and Design of MOSFETs

1. MOSFET physics and modeling.- 1.1 MOSFET evolution and its integrated circuits.- 1.2 MOS fundamentals.- 1.3 Concept and operation of MOSFETs.- 1.4 Modeling of conventional MOSFETs.- 1.5 Short-channel effects.- 1.6 Narrow-channel effects.- 1.7 Hot-carrier effects.- 1.8 Quantum mechanical effects in deep-submicron MOS devices.- 1.9 Modeling the lightly-doped-drain (LDD) MOSFET.- 1.10 Modeling the silicon-on-insulator (SOI) MOSFET.- References.- 2. MOSFET simulation using device simulators.- 2.1 Introduction to device simulators.- 2.2 Description of MEDICI device simulator.- 2.3 Numerical algorithms.- 2.4 Grid in MEDICI.- 2.5 Example of MOSFET simulation.- 2.6 Three-dimensional device simulation.- References.- 3. Extraction of the threshold voltage of MOSFETs.- 3.1 Existing methods for extracting the threshold voltage.- 3.2 Improved threshold voltage extraction method.- 3.3 Threshold voltage shift reversal in short-channel MOSFETs.- 3.4 Threshold voltage shift due to quantum mechanical effects.- References.- 4. Methods for extracting the effective channel length of MOSFETs.- 4.1 Introduction.- 4.2 Current-voltage methods.- 4.3 Capacitance-voltage method.- 4.4 Simulation-based method.- 4.5 Comparison of various extraction methods.- References.- 5. Extraction of the source and drain series resistances of MOSFETs.- 5.1 Introduction.- 5.2 Extraction of total drain and source series resistance.- 5.3 Difference in drain and source series resistances.- 5.4 Physical mechanisms contributing to the drain and source asymmetry.- References.- 6. Parameter extraction of lightly-doped drain (LDD) MOSFETs.- 6.1 Validity of the I-V extraction method for LDD MOSFETs.- 6.2 Bias-dependent effective channel length and series resistance.- 6.3 Constant effective channel length determination method.- 6.4 Capacitance-based metallurgical channel length determination method.- 6.5 Drain and source resistances of LDD MOSFETs.- 6.6 Gate-oxide thickness dependence of LDD MOSFET parameters.-