Dilute III-V Nitride Semiconductors and Material Systems

1. Energetic Beam Synthesis of Dilute Nitrides and Related Alloys

2. Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells

3. Electronic Band Structure of Highly Mismatched Semiconductor Alloys

4. Electronic Structure of GaAs1-xNx under Pressure

5. Experimental Studies of GaInNAs Conduction Bandstructure

6. Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues

7. The effects of Nitrogen Incorporation on Photo-Generated Carrier Dynamics in Dilute Nitrides

8. Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

9. Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III-As-N Alloys

10. The Hall Mobility in Dilute Nitrides

11. Spin Dynamics in Dilute Nitride

12. Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs

13. Properties and Laser Applications of the GaP-based Ga(NAsP)-Material System for Integration to Si substrates

14. Comparison of the Electronic Band Formation and Bandstructure of Ga(N,As) and Ga(N,P)

15. Doping, Electrical Properties and Solar Cell Application of (GaIn)(NAs)

16. Elemental Devices and Circuits for Monolithic Optoelectronic Integrated Circuit Fabricated in Dislocation-free Si/III-V-N Alloy Layers Grown on Si Substrate

17. Analysis of GaInNAs Based Devices: Lasers and Semiconductor Optical Amplifiers

18. Dilute-Nitride Quantum Well Lasers by Metalorganic Chemical Vapour Deposition

19. Interdiffused InGaAsSbN Quantum Well on GaAs for 1300-1550 nm Diode Lasers

20. Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides

21. Dilute Nitride Photodetector and Modulator DevicesNP Alloys: A New Material for Lattice Matching to GaAs

13. Properties and Laser Applications of the GaP-based Ga(NAsP)-Material System for

Ayse Erol obtained her Ph.D. degree in 2002 from the Physics Department of the Istanbul University in Turkey. During her PhD studies, she joined to Prof. Naci Balkan's group for researches on Dilute Nitride Semiconductors as a Research Fellow in 2001. From 1998 to 2004 she was employed as Research Assistant at Istanbul University and in 2004 she promoted to Assistant Professor Position. Main research areas include semiconductor optoelectronics, vertical cavity surface emitting lasers, and optical characterization of low dimensional semiconductor devices such as GaAs/GaAlAs and GaInNAs/GaAs quantum wells. She has published several research papers and she is co-author a popular science book and co-editor of a conference proceeding journal. She is currently an Assistant Professor in Solid State Division, Physics Department, at the Istanbul University and continues her researches at Nano- and Optoelectronics Materials and Devices Research Laboratory.