Impact of Ion Implantation on Quantum Dot Heterostructures and Devices

Preface.- Acknowledgement.- Contents.- List of Figures.- List of Tables.- Abbreviations.- Chapter 1: Introduction to Quantum Dots.- Chapter 2: Low energy ion implantation over single layer InAs/GaAs quantum dots.- Chapter 3: Optimizations for quaternary alloy (InAlGaAs) capped InAs/GaAs multilayer quantum dots.- Chapter 4: Effects of low energy light ion (H-) implantations on quaternary-alloy-capped InAs/GaAs quantum dot infrared photodetectors.- Chapter 5: Effects of low energy light ion (H-) implantation on quaternary-alloy-capped InGaAs/GaAs quantum dot infrared photodetectors.

Dr. Arjun Mandal is currently working as a Research Associate at the University of Wisconsin-Madison, USA. His current work involves GaAs based Hydride Vapor Phase Epitaxy (HVPE) synthesis of lattice-mismatched "virtual substrates", and materials synthesis for advanced Quantum Cascade Laser (QCL) development. He also works on modeling of vapor phase epitaxy growths using computational fluid dynamics. Previously, he worked at the Semiconductor Materials and Processes Laboratory (SMPL) at Chonbuk National University, South Korea. During this period, his research works included growth and characterizations of InGaN/GaN quantum dots and multi quantum well (MQW) heterostructures on GaN nanowires for LED device applications. For this purpose, growths were done with nitride based MOCVD system. Also, He had worked on GaN nanowire-graphene based hybrid structures for ultraviolet photoconductive device applications. Prior to joining SMPL, he had spent six months in the Electrical Engineering Department, IIT Bombay as a Research Associate from where he completed his Ph.D. in 2014 in Microelectronics; he received his M. Tech. from Institute of Radiophysics and Electronics, University of Calcutta in 2008. The topic of his doctoral research was effect of ion implantation on the In(Ga)As/GaAs based quantum dot (QD) heterostructures, mainly Infrared Photodetectors. He has expertise in Molecular Beam Epitaxy (MBE) system, responsible for growth optimization and growth of various In(Ga)As/GaAs QD heterostructures over three years during his Ph. D. at IIT Bombay ; also had worked on material and optical characterizations of dots, fabrications and different characterizations of the optoelectronics devices. He had served as a Vice-chair of IEEE Student Branch, Calcutta section during the period of 2007-08.

Subhananda Chakrabarti received his M.Sc. and Ph.D. degrees from the Department of Electronic Science, University of Calcutta, Kolkata, India in 1993 and 2000,