New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation

Review of Research on Scaled Device Architectures and Importance of Lower Substrate Temperature Operation of n-MOSFETs.- Review of Research on Scaled Device Architectures and Importance of Lower Substrate Temperature Operation of n-MOSFETs.- Step-by-Step Computation of Threshold Voltage as a Function of Substrate Temperatures.- Step-by-Step Computation of Threshold Voltage as a Function of Substrate Temperatures.- Simulation Outcomes For Profile of Threshold Voltage As a Function of Substrate Temperature Based on Key Device-Centric Parameters.- Simulation Outcomes For Profile of Threshold Voltage As a Function of Substrate Temperature Based on Key Device-Centric Parameters.- Scaling Projection of Long Channel Threshold Voltage Variability with Substrate Temperatures to Scaled Node.- Scaling Projection of Long Channel Threshold Voltage Variability with Substrate Temperatures to Scaled Node.- Advantage of Lower Substrate Temperature MOSFET Operation to Minimize Short Channel Effects andEnhance Reliability.- Advantage of Lower Substrate Temperature MOSFET Operation to Minimize Short Channel Effects and Enhance Reliability.- A Prospective Outlook on Implementation Methodology of Regulating Substrate Temperatures on Silicon Die.- A Prospective Outlook on Implementation Methodology of Regulating Substrate Temperatures on Silicon Die.- Summary of Research Results.- Conclusion.- References.- Authors' Biographies.

Nabil Shovon Ashraf was born in Dhaka, Bangladesh, in 1974. He obtained his Bachelor's degree in Electrical Engineering (EE) from Indian Institute of Technology Kanpur, India, in 1997, Master's degree in EE from University of Central Florida, Orlando, Florida, in 1999, and Doctorate degree in EE from Arizona State University, Tempe, Arizona, in 2011. He was a post doctoral researcher in the department of electrical engineering of Arizona State University from 2011-2014. He was employed as design engineer in RF Monolithics Inc., a surface acoustic wave (SAW) based filter design company in Dallas, Texas, from 1999-2001. From 2003 till 2006 he served on the faculty of the department of Electrical & Electronic Engineering of Islamic University of Technology, Gazipur, Bangladesh, as Assistant Professor. In fall 2014, he became Assistant Professor in the department of Electrical and Computer Engineering (ECE) of North South University, Dhaka, Bangladesh. He has been listed in Marquis Who's Who in America in 2016 (70th platinum edition) and also in 2015 (69th edition). Dr. Ashraf has, to date, published six peer reviewed journal papers (two IEEE EDS society) and around 14 conference papers (three IEEE EDS society). He has also contributed to two book chapters on interface trap-induced reliability aspects (threshold voltage fluctuations) of nanoscale devices. He specializes in the area of device physics and modeling analysis of scaled devices for enabling improved device performance at the scaled node of current MOSFET device architectures. Shawon Alam successfully completed his Bachelor's of Science in Electrical and Electronic Engineering from North South University in August 2015, and has performed research (2014âEUR"2015) concentrating on nanoscale nMOSFET device modeling on threshold voltage with the impact of temperature (100K-500K). Later, he joined an internship program at a multinational telecommunications company for a period of four months. He was involved