Transistor Level Modeling for Analog/RF IC Design
(Sprache: Englisch)
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling.
The variety of subjects and the high quality of content of this volume make it a reference document for researchers and...
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Klappentext zu „Transistor Level Modeling for Analog/RF IC Design “
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling.
The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Inhaltsverzeichnis zu „Transistor Level Modeling for Analog/RF IC Design “
- Foreword. Introduction.1. 2/3D process and devices simulation.
2. PSP: An advanced surface-potential-based mosfet model.
3. EKV 3.0 mosfet model.
4. Modeling using high-frequency measurements.
5. Empirical FET Models.
6. Modeling the SOI MOSFET Nonlinearities.
7. Circuit level RF modeling and design.
8. On incorporating parasitic quantum effects in classical circuits simulations.
9. Compact modeling of the MOSFET in VHDL-AMS.
10. Compact modeling in Verilog-A
- Index
Autoren-Porträt
Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.
Bibliographische Angaben
- 2006, 294 Seiten, mit Abbildungen, Maße: 16,9 x 24,9 cm, Gebunden, Englisch
- Herausgegeben:Grabinski, Wladyslaw; Nauwelaers, Bart; Schreurs, Dominique
- Herausgegeben: Wladyslaw Grabinski, Bart Nauwelaers, Dominique Schreurs
- Verlag: Springer Netherlands
- ISBN-10: 1402045557
- ISBN-13: 9781402045554
- Erscheinungsdatum: 22.03.2006
Sprache:
Englisch
Rezension zu „Transistor Level Modeling for Analog/RF IC Design “
"A comprehensive book on state of the art emerging MOSFET models for the design and simulation of analog, digital or RF Integrated Circuits." Narain Arora, Cadence Design Systems, California, USA
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