Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations / Electronic Materials: Science & Technology (PDF)
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A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage.
The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept:
-Explains diffusive processes at room temperature and materials/materials combination in resistive switching;
-Illustrates the role of defects in zero, one, and two dimensions;
-Features applications of ReRAMs in engineering such as novel computing architectures.
Department of Materials Science and Engineering, and Assistant Professor at the Department of
Electrical Engineering and Computer Science at MIT. Prior she is was non-tenure track assistant
professor at ETH Zurich Switzerland where she held two prestigeous externally funded career
grants, namely an ERC Starting Grant (SNSF) and Swiss National Science Foundation (SNF)
professorship.
- 2021, 1st ed. 2022, 383 Seiten, Englisch
- Herausgegeben: Jennifer Rupp, Daniele Ielmini, Ilia Valov
- Verlag: Springer Nature Switzerland
- ISBN-10: 3030424243
- ISBN-13: 9783030424244
- Erscheinungsdatum: 15.10.2021
Abhängig von Bildschirmgröße und eingestellter Schriftgröße kann die Seitenzahl auf Ihrem Lesegerät variieren.
- Dateiformat: PDF
- Größe: 15 MB
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